Normal state properties of high-Tc oxides

J.E. Hirsch and F. Marsiglio , Physica C 195, 355 (1992)

We discuss the expected behavior of normal state properties of high $T_{c}$ oxides within the framework of the theory of hole superconductivity. The basic assumptions are: the normal state is a Fermi liquid, the bandwidth varies with carrier concentration, and the carrier concentration varies with temperature. We calculate the temperature and doping dependence of Hall number, resistivity, thermopower, magnetic susceptibility and nuclear spin relaxation rate, as well as the dependence of $T_{c}$ on the hole concentration at room temperature. Some of our results exhibit remarkable qualitative agreement with experiment. Experiments that would test the key prediction of bandwidth expansion with hole doping are discussed.